Silicon Carbide Sic graphite crucible mo u'amea liusuavai ma le vevela maualuga
Silicon Carbide Crucible Performance
| Parameter | Fa'amaumauga | Parameter | Fa'amaumauga |
| SiC | ≥85% | Malosi Tu'imomomo Malili | ≥100MPa |
| SiO₂ | ≤10% | E aliali mai Porosity | ≤%18 |
| Fe₂O₃ | <1% | Tete'e o le vevela | ≥1700°C |
| Ole tele ole Density | ≥2.60 g/cm³ | E mafai ona tatou gaosia e tusa ai ma manaoga o tagata faatau | |
Fa'amatalaga
I le avea ai o se ituaiga o oloa refractory alualu i luma, Silicon carbide graphite crucible o le mea refractory sili i le alamanuia metallurgy paʻu (tele omomi uʻamea tunnel kiln). O le Silicon carbide graphite crucible na gaosia e Rongsheng Group e faʻaaogaina le 98% maualuga-grade silicon carbide graphite graphite, ma se faʻagasologa faʻapitoa e faʻaopoopoina i le filifilia o mea mataʻutia e faʻamautinoa ai le maualuga o le mama o mea mata.
Silicon carbide graphite crucible o loʻo faʻaaogaina lautele i alamanuia vailaʻau, mea leaga ma le omomi uʻamea, uʻamea uʻamea, photovoltaic power generation, malosiaga faaniukilia ma ogaumu eseese, e pei o le ogaumu masani, ogaumu electromagnetic, ogaumu tetee, ogaumu tioata carbon, ogaumu mumu, ma isi.
Talosaga
Silicon Carbide Graphite Crucible ua avea ma se filifiliga lauiloa mo vailaʻau faʻamaʻi, uʻamea ma uʻamea, gaosi eletise photovoltaic, ma afi faaniukilia. E talafeagai foi mo le faʻaaogaina i le tele o ogaumu e pei ole feololo, electromagnetic, teteʻe, tioata kaponi, ma ogaumu laiti ona o lona lelei tele o le vevela, maualuga le vevela, faʻafefe maualuga, ma le teteʻe i le vevela.
Gufan Sic crucible Avanoa
Silicon carbide graphite crucible gaosia e Gufan Carbon Co.Ltd. e iai uiga o le fetuutuunai lelei, e le faigofie ona taʻe, ma le umi o le auaunaga, ma le tele o le gafatia o le sagger e faʻateleina ai le gaosiga, faʻamaonia le lelei, faʻasaoina galuega ma le tele o tau.
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